BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS
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BD745B-S (pdf) |
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BD745C-S |
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BD745A-S |
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BD745-S |
PDF Datasheet Preview |
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BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD746 Series ● 115 W at 25°C Case Temperature ● 20 A Continuous Collector Current ● 25 A Peak Collector Current ● Customer-Specified Selections Available SOT-93 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature unless otherwise noted RATING VALUE UNIT BD745 OBSOLETE Collector-base voltage IE = 0 Collector-emitter voltage IB = 0 Emitter-base voltage Continuous collector current Peak collector current see Note 1 Continuous base current Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Unclamped inductive load energy see Note 4 Operating free air temperature range Operating junction temperature range BD745A BD745B BD745C BD745 BD745A BD745B BD745C VCBO VCEO VEBO IC ICM IB Ptot TA Tj Storage temperature range Tstg Lead temperature mm from case for 10 seconds -65 to +150 -65 to +150 -65 to +150 NOTES This value applies for tp ms, duty cycle Derate linearly to 150°C case temperature at the rate of W/°C. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of L = 20 mH, IB on = A, RBE = 100 VBE off = 0, RS = VCC = 20 V. PRODUCT INFORMATION BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX UNIT BD745 Collector-emitter V BR CEO breakdown voltage IC = 30 mA IB = 0 BD745A see Note 5 BD745B |
More datasheets: B66285P0000X149 | B66285P0000X192 | B66285P0000X197 | B66455P0000X149 | B66455P0000X192 | B66455P0000X197 | B59860C120A54 | 821902B00000 | FQB25N33TM-F085 | BD745C-S |
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