FQB25N33TM-F085
FQB25N33TM-F085 Datasheet
FQB25N33TM_F085 330V N-Channel MOSFET
| Part | Datasheet |
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FQB25N33TM-F085 |
FQB25N33TM-F085 (pdf) |
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| FQB25N33TM_F085 330V N-Channel MOSFET FQB25N33TM_F085 330V N-Channel MOSFET • 25A, 330V, RDS on = = 10V • Low gate charge typical 58nC • Low Crss typical 40pF • Fast switching • 100% avalanche tested • Improved dv/dt capability • Qualified to AEC Q101 • RoHS Compliant April 2010 These N-Channel enhancement mode power field effect transistors are produced using Farichild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimized on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. Absolute Maximum Ratings Parameter VDSS IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current - Continuous TC = 25oC - Continuous TC = 100oC Drain Current - Pulsed Gate -Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalance Energy Peak Diode Recovery dv/dt Power Dissipation TA = 25oC * Power Dissipation TC = 25oC - Derate above 25oC TJ, TSTG Operating and Storage Temperature Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient * Thermal Resistance, Junction to Ambient * When mounted on the minimum pad size recommended PCB Mount 2010 Fairchild Semiconductor Corporation Note 1 Note 2 Note 1 Note 1 Note 3 Ratings 330 25 100 ±30 370 25 37 250 -55 to +150 Units V A V mJ A mJ V/ns W W/oC Ratings 40 Units oC/W oC/W oC/W FQB25N33TM_F085 330V N-Channel MOSFET Package Marking and Ordering Information Device Marking Device FQB25N33 FQB25N33TM_F085 Package D2-PAK Reel Size 330mm Tape Width 24mm Quantity Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage ID = 250µA, VGS = 0V Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25oC IDSS Zero Gate Voltage Drain Current VDS = 330V,VGS = 0V VDS = 264V,TC =125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V IGSSR Gate-Body Leakage Current, Forward VGS = -30V, VDS = 0V ----- 1 10 100 -100 V/oC µA nA On Characteristics VGS th RDS on gFS Gate Threshold Voltage Drain to Source On Resistance Forward Transonductance VDS = VGS, ID = 250µA VGS = 10V, ID = 12.5A, VDS = 50V, ID = 12.5A, Note 4 -- Dynamic Characteristics Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1.0MHz -- 1510 2010 pF |
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