BD646-S

BD646-S Datasheet

BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS

Part	Datasheet
BD646-S	BD646-S (pdf)

Related Parts	Information
BD648-S	BD648-S
BD650-S	BD650-S
BD652-S	BD652-S

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BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A This series is obsolete and not recommended for new designs. TO-220 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature unless otherwise noted RATING VALUE UNIT BD646 OBSOLETE Collector-base voltage IE = 0 Collector-emitter voltage IB = 0 Emitter-base voltage Continuous collector current Peak collector current see Note 1 Continuous base current Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Unclamped inductive load energy see Note 4 Operating junction temperature range Storage temperature range BD648 BD650 BD652 BD646 BD648 BD650 BD652 VCBO VCEO VEBO IC ICM IB Ptot Tj Tstg Lead temperature mm from case for 10 seconds -100 V -120 -140 -80 V -100 -120 -65 to +150 -65 to +150 NOTES This value applies for tp ms, duty cycle Derate linearly to 150°C case temperature at the rate of W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of L = 20 mH, IB on = -5 mA, RBE = 100 VBE off = 0, RS = VCC = -20 V. PRODUCT INFORMATION BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX BD646 Collector-emitter V BR CEO breakdown voltage IC = -30 mA IB = 0

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BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS
● Designed for Complementary Use with BD645, BD647, BD649 and BD651
● W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A

This series is obsolete and not recommended for new designs.

TO-220 PACKAGE TOP VIEW

Pin 2 is in electrical contact with the mounting base.

MDTRACA
absolute maximum ratings at 25°C case temperature unless otherwise noted

RATING

VALUE

UNIT

BD646

OBSOLETE Collector-base voltage IE = 0

Collector-emitter voltage IB = 0

Emitter-base voltage Continuous collector current Peak collector current see Note 1 Continuous base current Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Unclamped inductive load energy see Note 4 Operating junction temperature range Storage temperature range

BD648 BD650 BD652 BD646 BD648 BD650 BD652

VCBO

VCEO

VEBO IC ICM IB Ptot

Tj Tstg

Lead temperature mm from case for 10 seconds
-100 V
-120
-140
-80 V
-100
-120
-65 to +150
-65 to +150

NOTES This value applies for tp ms, duty cycle Derate linearly to 150°C case temperature at the rate of W/°C.

Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

This rating is based on the capability of the transistor to operate safely in a circuit of L = 20 mH, IB on = -5 mA, RBE = 100 VBE off = 0, RS = VCC = -20 V.

PRODUCT INFORMATION

BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature unless otherwise noted

PARAMETER

TEST CONDITIONS

MIN TYP MAX

BD646

Collector-emitter V BR CEO breakdown voltage

IC = -30 mA IB = 0

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Datasheet ID: BD646-S 522110