BD250B-S

BD250B-S Datasheet

BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS

Part	Datasheet
BD250B-S	BD250B-S (pdf)

Related Parts	Information
BD250A-S	BD250A-S
BD250C-S	BD250C-S
BD250-S	BD250-S

PDF Datasheet Preview
BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available SOT-93 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature unless otherwise noted RATING VALUE UNIT BD250 OBSOLETE Collector-emitter voltage RBE = 100 Collector-emitter voltage IC = -30 mA Emitter-base voltage Continuous collector current Peak collector current see Note 1 Continuous base current Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Unclamped inductive load energy see Note 4 Operating junction temperature range Storage temperature range BD250A BD250B BD250C BD250 BD250A BD250B BD250C VCER VCEO VEBO IC ICM IB Ptot Tj Tstg Lead temperature mm from case for 10 seconds -70 V -115 -60 V -100 -65 to +150 -65 to +150 NOTES This value applies for tp ms, duty cycle Derate linearly to 150°C case temperature at the rate of 1 W/°C. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of L = 20 mH, IB on = A, RBE = 100 VBE off = 0, RS = VCC = -20 V. PRODUCT INFORMATION BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX BD250 Collector-emitter V BR CEO breakdown voltage IC = -30 mA see Note 5 IB = 0 BD250A BD250B BD250C -60 -80 -100

PDF Datasheet Preview

BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS
● Designed for Complementary Use with the BD249 Series
● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

SOT-93 PACKAGE TOP VIEW

Pin 2 is in electrical contact with the mounting base.

MDTRAAA
absolute maximum ratings at 25°C case temperature unless otherwise noted

RATING

VALUE

UNIT

BD250

OBSOLETE Collector-emitter voltage RBE = 100

Collector-emitter voltage IC = -30 mA

Emitter-base voltage Continuous collector current Peak collector current see Note 1 Continuous base current Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Unclamped inductive load energy see Note 4 Operating junction temperature range Storage temperature range

BD250A BD250B BD250C BD250 BD250A BD250B BD250C

VCER

VCEO

VEBO IC ICM IB Ptot

Tj Tstg

Lead temperature mm from case for 10 seconds
-70 V
-115
-60 V
-100
-65 to +150
-65 to +150

NOTES This value applies for tp ms, duty cycle Derate linearly to 150°C case temperature at the rate of 1 W/°C.

Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.

This rating is based on the capability of the transistor to operate safely in a circuit of L = 20 mH, IB on = A, RBE = 100 VBE off = 0, RS = VCC = -20 V.

PRODUCT INFORMATION

BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN TYP MAX

BD250

Collector-emitter V BR CEO breakdown voltage

IC = -30 mA see Note 5

IB = 0

BD250A BD250B BD250C
-60 -80 -100

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Datasheet ID: BD250B-S 522100