FDS4080N7

FDS4080N7 Datasheet


FDS4080N7

Part Datasheet
FDS4080N7 FDS4080N7 FDS4080N7 (pdf)
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FDS4080N7

February 2004

FDS4080N7
40V N-Channel FLMP MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package.
• Synchronous rectifier
• DC/DC converter
• 13 A, 40 V

RDS ON = 10 VGS = 10 V
• High performance trench technology for extremely low RDS ON
• High power and current handling capability
• Fast switching Qg = 30 nC
• FLMP SO-8 package Enhanced thermal performance in industry-standard package size

Bottom-side

Drain Contact

Absolute Maximum Ratings TA=25oC unless otherwise noted

Parameter

VDSS VGSS ID

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

PD TJ, TSTG

Power Dissipation for Single Operation

Note 1a

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ambient

Note 1a
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS4080N7

FDS4080N7
13’’

Ratings
40 ± 20 13 60 to +150

Tape width 12mm

Units

W °C
°C/W °C/W

Quantity 2500 units

Fairchild Semiconductor Corporation

FDS4080N7

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Drain-Source Avalanche Ratings Note 2

Drain-Source Avalanche Energy Single Pulse, VDD = 10V, ID=13A

Drain-Source Avalanche Current

Off Characteristics

BVDSS

IDSS

Breakdown Voltage Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF

Leakage, Forward

IGSSR

VGS = 0 V, ID = 250 µA

ID = 250 µA, Referenced to 25°C

VDS = 32 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = V ,VDS = 0 V

On Characteristics Note 2

VGS th

RDS on

Gate Threshold Voltage

Gate Threshold Voltage Temperature Coefficient Static

Forward Transconductance

VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C
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Datasheet ID: FDS4080N7 514308