BD246C-S

BD246C-S Datasheet


BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS

Part Datasheet
BD246C-S BD246C-S BD246C-S (pdf)
Related Parts Information
BD246-S BD246-S BD246-S
BD246A-S BD246A-S BD246A-S
BD246B-S BD246B-S BD246B-S
PDF Datasheet Preview
BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS
● Designed for Complementary Use with the BD245 Series
● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available

SOT-93 PACKAGE TOP VIEW

Pin 2 is in electrical contact with the mounting base.

MDTRAAA
absolute maximum ratings at 25°C case temperature unless otherwise noted

RATING

VALUE

UNIT

BD246

OBSOLETE Collector-emitter voltage RBE = 100

Collector-emitter voltage IC = -30 mA

Emitter-base voltage Continuous collector current Peak collector current see Note 1 Continuous base current Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Unclamped inductive load energy see Note 4 Operating junction temperature range Storage temperature range

BD246A BD246B BD246C BD246 BD246A BD246B BD246C

VCER

VCEO

VEBO IC ICM IB Ptot

Tj Tstg

Lead temperature mm from case for 10 seconds
-70 V
-115
-60 V
-100
-65 to +150
-65 to +150

NOTES This value applies for tp ms, duty cycle Derate linearly to 150°C case temperature at the rate of W/°C.

Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.

This rating is based on the capability of the transistor to operate safely in a circuit of L = 20 mH, IB on = A, RBE = 100 VBE off = 0, RS = VCC = -20 V.

PRODUCT INFORMATION

BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN TYP MAX

BD246

Collector-emitter V BR CEO breakdown voltage

IC = -30 mA see Note 5

IB = 0

BD246A BD246B BD246C
-60 -80 -100
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Datasheet ID: BD246C-S 522098