BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS
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BD241B-S (pdf) |
Related Parts | Information |
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BD241C-S |
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BD241A-S |
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BD241-S |
PDF Datasheet Preview |
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BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD242 Series 40 W at 25°C Case Temperature 3 A Continuous Collector Current 5 A Peak Collector Current Customer-Specified Selections Available This series not recommended for new designs. TO-220 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature unless otherwise noted RATING BD241 OBSOLETE Collector-emitter voltage RBE = 100 Collector-emitter voltage IC = 30 mA Emitter-base voltage Continuous collector current Peak collector current see Note 1 Continuous base current Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Unclamped inductive load energy see Note 4 Operating junction temperature range Storage temperature range BD241A BD241B BD241C BD241 BD241A BD241B BD241C VCER VCEO VEBO IC ICM IB Ptot Tj Tstg Lead temperature mm from case for 10 seconds VALUE 55 70 90 115 45 60 80 100 5 3 5 1 40 2 32 -65 to +150 -65 to +150 250 UNIT V A W mJ °C °C °C NOTES This value applies for tp ms, duty cycle Derate linearly to 150°C case temperature at the rate of W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of L = 20 mH, IB on = A, RBE = 100 VBE off = 0, RS = VCC = 20 V. BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX BD241 Collector-emitter V BR CEO breakdown voltage IC = 30 mA see Note 5 IB = 0 BD241A BD241B BD241C VCE = 55 V VBE = 0 BD241 Collector-emitter ICES cut-off current VCE = 70 V VCE = 90 V |
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