BLM8G0710S-45AB; BLM8G0710S-45ABG

BLM8G0710S-45ABY BLM8G0710S-45ABGY

BLM8G0710S-45AB BLM8G0710S-45ABG LDMOS 2-stage Power MMIC Datasheet


BLM8G0710S-45AB and BLM8G0710S-45ABG LDMOS 2-stage power MMIC

The BLM8G0710S-45AB(G) is a dual section, asymmetric, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as small cell final stage in Doherty configuration, or as general purpose driver in the 700 MHz to 1000 MHz frequency range. Available in gull wing or straight lead outline.

Features
• Designed for broadband operation (frequency 700 MHz to 1000 MHz)
• High section-to-section isolation enabling multiple combinations
• High Doherty efficiency thanks to 2 1 asymmetry
• Integrated temperature compensated bias
• Biasing of individual stages is externally accessible
• Integrated ESD protection
• Excellent thermal stability
• High power gain
• On-chip matching for ease of use
• Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)

Applications
• RF power MMIC for W-CDMA base stations in the 700 MHz to 1000 MHz frequency range.

BLM8G0710S-45ABY Datasheet RF FET LDMOS 65V 35DB SOT12112

BLM8G0710S-45ABGY Datasheet RF FET LDMOS 65V 35DB SOT12122



Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BLM8G0710S-45AB BLM8G0710S-45ABG LDMOS 2-stage Power MMIC Datasheet file may be downloaded here without warranties.