A4F04QD8BLPBSE
A4F04QD8BLPBSE Datasheet
ATP A4F04QD8BLPBSE
| Part | Datasheet |
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A4F04QD8BLPBSE |
A4F04QD8BLPBSE (pdf) |
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| Electronics, Inc. 2590 North First Street, San Jose, CA 95131, U.S.A. Tel 408-732-5000 Fax 408-732-5055 ATP A4F04QD8BLPBSE 4GB DDR4-2133 UNBUFFERED ECC SODIMM DESCRIPTION The ATP A4F04QD8BLPBSE is a high performance 4GB DDR4-2133 Unbuffered ECC SDRAM memory module. It is organized as 512M x 72 in a 260-pin Small Outline Dual-In-Line Memory Module SODIMM package. The module utilizes nine 512Mx8 DDR4 SDRAMs in FBGA package. The module consists of a 512-byte serial EEPROM, which contains the module configuration information. KEY FEATURES • High Density 4GB 512M x 72 • DIMM Rank 1 Rank • Cycle Time 0.93ns 1067MHz • CAS Latency 15 • Power supply VDD=1.2V ± 0.06V VPP=2.5V± 0.125V VDDSPD=2.2V~3.6V • Support ECC error detection and correction • Nominal and dynamic on-die termination ODT for data, strobe, and mask signals • Low-power auto self refresh LPASR • Data bus inversion DBI for data bus • 16 internal banks x8 4 groups of 4 banks each • Internal self calibration through ZQ • Temperature controlled refresh TCR • Asynchronous Reset • refresh interval at lower than TCASE85°C, refresh interval at 85°C < TCASE < 95 °C • Support address and command signals parity function • Selectable BC4 or BL8 on-the fly OTF • Dynamic On Die Termination • Fly-by topology • Full module heat spreader • PCB Height inches 30mm • Minimum Thickness of Golden Finger 30 Micro-inch • RoHS compliant Part No. A4F04QD8BLPBSE Max Freq 1067MHz x2 Your Ultimate Memory Solution! Page 1 of 11 Interface POD12 ATP A4F04QD8BLPBSE PIN DESCRIPTION Pin Name A0~A16 Address Inputs A10/AP Address Input/Auto precharge A12/BC_n Address Input/Burst chop BA0,BA1 SDRAM Bank Address BG0,BG1 Bank group address inputs RAS_n Row address strobe input CAS_n Column address strobe input WE_n Write enable input CS0_n Chip Selects CK0_t Clock Inputs, positive line CK0_c Clock Inputs, negative line CKE0 Clock Enables C0~C2 Chip ID |
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