FQA19N20C

FQA19N20C Datasheet

FQA19N20C

Part	Datasheet
FQA19N20C	FQA19N20C (pdf)

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FQA19N20C FQA19N20C 200V N-Channel MOSFET QFET These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. • 21.8A, 200V, RDS on = = 10 V • Low gate charge typical nC • Low Crss typical 85 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability TO-3PN FQA Series ● ● Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds FQA19N20C 200 ± 30 433 180 -55 to +150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient Units V A V mJ A mJ V/ns W W/°C °C Units °C/W °C/W °C/W 2004 Fairchild Semiconductor Corporation FQA19N20C

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FQA19N20C

FQA19N20C
200V N-Channel MOSFET

QFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
• 21.8A, 200V, RDS on = = 10 V
• Low gate charge typical nC
• Low Crss typical 85 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

TO-3PN

FQA Series
● ●

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

FQA19N20C 200 ± 30 433 180
-55 to +150

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient

Units V A V mJ A mJ

V/ns W

W/°C °C

Units °C/W °C/W °C/W
2004 Fairchild Semiconductor Corporation

FQA19N20C

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Datasheet ID: FQA19N20C 515011