HMC637LP5E

HMC637LP5E Datasheet

The HMC637LP5 E wideband PA is ideal for • Telecom Infrastructure • Microwave Radio & VSAT • Military & Space • Test Instrumentation • Fiber Optics

Part	Datasheet
HMC637LP5E	HMC637LP5E (pdf)

Related Parts	Information
108347-HMC637LP5	108347-HMC637LP5

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Amplifiers - SMT The HMC637LP5 E wideband PA is ideal for • Telecom Infrastructure • Microwave Radio & VSAT • Military & Space • Test Instrumentation • Fiber Optics Functional Diagram HMC637LP5/637LP5E v03.1213 GaAs MESFET MMIC 1 WATT Power Amplifier, DC - 6 GHz P1dB Output Power +29 dBm Gain 13 dB Output IP3 +40 dBm 50 Ohm Matched Input/Output 32 Lead 5x5mm Lead SMT Package 25mm2 The HMC637LP5 E is a GaAs MMIC MESFET Distributed Power Amplifier which operates between DC and 6 GHz. The amplifier provides 13 dB of gain, +40 dBm output IP3 and +29 dBm of output power at 1 dB gain compression while requiring 400 mA from a +12V supply. Gain flatness is excellent at dB from DC - 6 GHz making the HMC637LP5 E ideal for EW, ECM, Radar and test equipment applications. The HMC637LP5 E amplifier I/Os are internally matched to 50 Ohms and the 5x5 mm QFN package is compatible with high volume SMT assembly equipment. Electrical Specifications, TA = +25° C, Vdd= +12V, Vgg2= +5V, Idd= 400 mA* Parameter Min. Frequency Range Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression P1dB Saturated Output Power Psat Output Third Order Intercept IP3 Noise Figure Supply Current Idd * Adjust Vgg1 between -2 to 0V to achieve Idd= 400 mA typical. Typ. DC - 6 12 15 29 40 5 400 Max. 480 Units GHz dB/ °C dB dBm dB mA For price, delivery and to place orders Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824 Phone 978-250-3343 Fax 978-250-3373 Order On-line at Application Support Phone 978-250-3343 or Amplifiers - SMT Gain & Return Loss RESPONSE dB S21 S11 FREQUENCY GHz Input Return Loss vs. Temperature +25C +85C -40C RETURN LOSS dB FREQUENCY GHz ISOLATION dB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material Rogers 4350 The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824 Phone 978-250-3343 Fax 978-250-3373 Order On-line at Application Support Phone 978-250-3343 or

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Amplifiers - SMT

The HMC637LP5 E wideband PA is ideal for
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
• Fiber Optics

Functional Diagram

HMC637LP5/637LP5E
v03.1213

GaAs MESFET MMIC 1 WATT Power Amplifier, DC - 6 GHz

P1dB Output Power +29 dBm Gain 13 dB Output IP3 +40 dBm 50 Ohm Matched Input/Output 32 Lead 5x5mm Lead SMT Package 25mm2

The HMC637LP5 E is a GaAs MMIC MESFET Distributed Power Amplifier which operates between DC and 6 GHz. The amplifier provides 13 dB of gain, +40 dBm output IP3 and +29 dBm of output power at 1 dB gain compression while requiring 400 mA from a +12V supply. Gain flatness is excellent at dB from DC - 6 GHz making the HMC637LP5 E ideal for EW, ECM, Radar and test equipment applications. The HMC637LP5 E amplifier I/Os are internally matched to 50 Ohms and the 5x5 mm QFN package is compatible with high volume SMT assembly equipment.

Electrical Specifications, TA = +25° C, Vdd= +12V, Vgg2= +5V, Idd= 400 mA*

Parameter

Min.

Frequency Range

Gain

Gain Flatness

Gain Variation Over Temperature

Input Return Loss

Output Return Loss

Output Power for 1 dB Compression P1dB

Saturated Output Power Psat

Output Third Order Intercept IP3

Noise Figure

Supply Current Idd
* Adjust Vgg1 between -2 to 0V to achieve Idd= 400 mA typical.

Typ. DC - 6
12 15 29 40 5 400

Max. 480

Units GHz dB/ °C dB dBm dB mA

For price, delivery and to place orders Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824

Phone 978-250-3343 Fax 978-250-3373 Order On-line at

Application Support Phone 978-250-3343 or

Amplifiers - SMT

Gain & Return Loss

RESPONSE dB

S21 S11

FREQUENCY GHz

Input Return Loss vs. Temperature
+25C +85C
-40C

RETURN LOSS dB

FREQUENCY GHz

ISOLATION dB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material Rogers 4350

The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.

For price, delivery and to place orders Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824

Phone 978-250-3343 Fax 978-250-3373 Order On-line at

Application Support Phone 978-250-3343 or

More datasheets: PM54-221K | PM54-390L | PM54-151K | PM54-270M | PM54-220M | PM54-180M | PM54-150M | PM54-120M | PM54-100M | PM54-470L

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Datasheet ID: HMC637LP5E 517961