120728-HMC616LP3

120728-HMC616LP3 Datasheet

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Part	Datasheet
120728-HMC616LP3	120728-HMC616LP3 (pdf)

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Amplifiers - Low Noise - SMT v02.0610 7 Typical Applications The HMC616LP3 E is ideal for • Cellular/3G and LTE/WiMAX/4G • BTS & Infrastructure • Repeaters and Femtocells • Public Safety Radio • DAB Receivers Functional Diagram HMC616LP3 / 616LP3E GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz Low Noise Figure dB High Gain 24 dB High Output IP3 +37 dBm Single Supply +3V to +5V 50 Ohm Matched Input/Output 16 Lead 3x3mm QFN Package 9 mm2 The HMC616LP3 E is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 175 and 660 MHz. The amplifier has been optimized to provide dB noise figure, 24 dB gain and +37 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent with minimal external matching and bias decoupling components. The HMC616LP3 E shares the same package and pinout with the HMC617LP3 E and HMC618LP3 E LNAs. The HMC616LP3 E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. The HMC616LP3 E offers improved noise figure versus the previously released HMC356LP3 E . Electrical Specifications, TA = +25° C, Rbias = 3.92k Ohms* Parameter Frequency Range Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression P1dB Saturated Output Power Psat Output Third Order Intercept IP3 Supply Current Idd Vdd = +3V Min. Typ. Max. Min. Typ. Max. 175 - 230 230 - 660 Vdd = +5V Min. Typ. Max. Min. Typ. Max. 175 - 230 230 - 660 Units MHz dB/ °C dB 90 115 90 115 mA * Rbias resistor sets current, see application circuit herein For price, delivery and to place orders Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone 978-250-3343 Fax 978-250-3373 Order On-line at Application Support Phone 978-250-3343 or Amplifiers - Low Noise - SMT v02.0610 Broadband Gain & Return Loss RESPONSE dB 20 S21 Vdd= 5V Vdd= 3V 0 S22 -20 S11 FREQUENCY GHz HMC616LP3 / 616LP3E [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material Rogers For price, delivery and to place orders Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone 978-250-3343 Fax 978-250-3373 Order On-line at Application Support Phone 978-250-3343 or 7 - 10

PDF Datasheet Preview

Amplifiers - Low Noise - SMT
v02.0610
7 Typical Applications The HMC616LP3 E is ideal for
• Cellular/3G and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femtocells
• Public Safety Radio
• DAB Receivers

Functional Diagram

HMC616LP3 / 616LP3E

GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz

Low Noise Figure dB

High Gain 24 dB

High Output IP3 +37 dBm

Single Supply +3V to +5V
50 Ohm Matched Input/Output
16 Lead 3x3mm QFN Package 9 mm2

The HMC616LP3 E is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 175 and 660 MHz. The amplifier has been optimized to provide dB noise figure, 24 dB gain and +37 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent with minimal external matching and bias decoupling components. The HMC616LP3 E shares the same package and pinout with the HMC617LP3 E and HMC618LP3 E LNAs. The HMC616LP3 E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. The HMC616LP3 E offers improved noise figure versus the previously released HMC356LP3 E .

Electrical Specifications, TA = +25° C, Rbias = 3.92k Ohms*

Parameter

Frequency Range Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression P1dB Saturated Output Power Psat Output Third Order Intercept IP3 Supply Current Idd

Vdd = +3V

Min. Typ. Max. Min. Typ. Max.
175 - 230
230 - 660

Vdd = +5V

Min. Typ. Max. Min. Typ. Max.
175 - 230
230 - 660

Units

MHz dB/ °C dB
90 115
90 115 mA
* Rbias resistor sets current, see application circuit herein

For price, delivery and to place orders Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone 978-250-3343 Fax 978-250-3373 Order On-line at Application Support Phone 978-250-3343 or

Amplifiers - Low Noise - SMT
v02.0610

Broadband Gain & Return Loss

RESPONSE dB
20 S21

Vdd= 5V

Vdd= 3V
0 S22
-20 S11

FREQUENCY GHz

HMC616LP3 / 616LP3E
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material Rogers

For price, delivery and to place orders Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone 978-250-3343 Fax 978-250-3373 Order On-line at Application Support Phone 978-250-3343 or
7 - 10

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Datasheet ID: 120728-HMC616LP3 517953