TSL267
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TSL267-LF (pdf) |
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TSL267SM-LF |
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TSL267 HIGH-SENSITIVITY IR LIGHT-TO-VOLTAGE CONVERTER TAOS033E − SEPTEMBER 2007 D Integral Visible Light Cutoff Filter D Converts IR Light Intensity to Output Voltage D Monolithic Silicon IC Containing Photodiode, Operational Amplifier, and Feedback Components D High Sensitivity D Single Voltage Supply Operation V to D Low Noise 200 uVrms Typ to 1 kHz D Rail-to-Rail Output D High Power-Supply Rejection 35 dB at 1 kHz D Compact 3-Leaded Plastic Package D RoHS Compliant −LF Package Only PACKAGE S SIDELOOKER FRONT VIEW PACKAGE SM SURFACE MOUNT SIDELOOKER FRONT VIEW 123 GND VDD OUT 123 GND VDD OUT The TSL267 is a high-sensitivity low-noise infrared light-to-voltage converter that combines a photodiode and a transimpedance amplifier on a single monolithic CMOS integrated circuit. Output voltage is directly proportional to IR light intensity irradiance on the photodiode. The TSL267 has a transimpedance gain of 320 MΩ. The device has improved offset voltage stability and low power consumption and is supplied in a 3-lead visible-light-blocking plastic sidelooker package with an integral lens. Available Options DEVICE TSL267 TA 0°C to 70°C 0°C to 70°C 0°C to 70°C PACKAGE − LEADS 3-lead Sidelooker 3-lead Sidelooker Lead Pb Free 3-lead Surface-Mount Sidelooker Lead Pb Free PACKAGE DESIGNATOR ORDERING NUMBER TSL267 TSL267−LF TSL267SM−LF Functional Block Diagram Voltage Output Terminal Functions TERMINAL NAME NO. Ground substrate . All voltages are referenced to GND. Output voltage Supply voltage The LUMENOLOGY r Company Texas Advanced Optoelectronic Solutions Inc. 1001 Klein Road S Suite 300 S Plano, TX 75074 S 972r 673-0759 Copyright E 2007, TAOS Inc. 1 TSL267 HIGH-SENSITIVITY IR LIGHT-TO-VOLTAGE CONVERTER TAOS033E − SEPTEMBER 2007 Absolute Maximum Ratings over operating free-air temperature range unless otherwise noted † Supply voltage, VDD see Note 1 6 V Output current, IO ± 10 mA Duration of short-circuit current at or below 25°C 5 s Operating free-air temperature range, TA −25°C to 85°C Storage temperature range, Tstg −25°C to 85°C Lead temperature 1,6 mm 1/16 inch from case for 10 seconds S Package 260°C Reflow solder, in accordance with J-STD-020C or J-STD-020D SM Package 260°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1 All voltages are with respect to GND. Recommended Operating Conditions Supply voltage, VDD Operating free-air temperature, TA MIN MAX UNIT 70 °C Electrical Characteristics at VDD = 5 V, TA = 25°C, λp = 940 nm, RL = 10 kΩ unless otherwise noted see Notes 2, 3, and 4 PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Dark voltage Ee = 0 VOM VO Maximum output voltage swing Output voltage VDD = V, VDD = V, Ee = uW/cm2 No Load RL = 10 kΩ αVD Temperature coefficient of dark voltage VD TA = 0°C to 70°C −15 uV/°C Irradiance responsivity See Note 5 |
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