BLF6G05LS-200RN,11

BLF6G05LS-200RN,11 Datasheet

BLF6G05LS-200RN

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BLF6G05LS-200RN,11	BLF6G05LS-200RN,11 (pdf)

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BLF6G05LS-200RN Power LDMOS transistor Product profile 200 W LDMOS power transistor for base station applications at frequencies from 460 MHz to 470 MHz. Table Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation PL AV 1-carrier W-CDMA 460 to 470 ACPR dBc [1] Test signal 3GPP test model 1 64 DPCH PAR = dB at % probability on CCDF. Typical 1-carrier W-CDMA performance at frequencies of 460 MHz and 470 MHz, a supply voltage of 28 V and an IDq of 1400 mA Average output power = 40 W Power gain = 24 dB Efficiency = 33 % ACPR = dBc Easy power control Integrated ESD protection Enhanced ruggedness High efficiency Excellent thermal stability Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances RF power amplifiers for W-CDMA and CDMA base stations and multicarrier applications in the 460 MHz to 470 MHz frequency range. NXP Semiconductors BLF6G05LS-200RN Power LDMOS transistor Pinning information Table Pin 1 2 3 Pinning Description drain gate source [1] Connected to flange. Ordering information Simplified outline Graphic symbol sym112 Table Ordering information Type number Package Name Description BLF6G05LS-200RN - earless flanged LDMOST ceramic package 2 leads Version SOT502B Limiting values Table Limiting values In accordance with the Absolute Maximum Rating System IEC Symbol Parameter Conditions drain-source voltage gate-source voltage drain current Tstg storage temperature junction temperature Min Max Unit +13 V +150 C 225 C Thermal characteristics Table Symbol Rth j-case Thermal characteristics Parameter Conditions thermal resistance from junction to case Tcase = 80 C PL = 40 W Unit K/W BLF6G05LS-200RN All information provided in this document is subject to legal disclaimers. NXP B.V. All rights reserved. 2 of 10 NXP Semiconductors BLF6G05LS-200RN Power LDMOS transistor Characteristics Table Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter V BR DSS drain-source breakdown voltage VGS th VGSq gate-source threshold voltage gate-source quiescent voltage Pinning information 2 Ordering information 2 Limiting values. 2 Thermal characteristics 2 Characteristics 3 Application information. 3 Ruggedness in class-AB operation 3 Test information 4 BLF6G05LS-200RN Power LDMOS transistor Please be aware that important notices concerning this document and the product s described herein, have been included in section ‘Legal information’. NXP B.V. All rights reserved. For more information, please visit For sales office addresses, please send an email to: Date of release 8 November 2011 Document identifier BLF6G05LS-200RN

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BLF6G05LS-200RN

Power LDMOS transistor

Product profile
200 W LDMOS power transistor for base station applications at frequencies from 460 MHz to 470 MHz.

Table Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit.

Mode of operation

PL AV
1-carrier W-CDMA
460 to 470

ACPR dBc
[1] Test signal 3GPP test model 1 64 DPCH PAR = dB at % probability on CCDF.

Typical 1-carrier W-CDMA performance at frequencies of 460 MHz and 470 MHz, a supply voltage of 28 V and an IDq of 1400 mA Average output power = 40 W Power gain = 24 dB Efficiency = 33 % ACPR = dBc

Easy power control Integrated ESD protection Enhanced ruggedness High efficiency Excellent thermal stability Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

RF power amplifiers for W-CDMA and CDMA base stations and multicarrier applications in the 460 MHz to 470 MHz frequency range.

NXP Semiconductors

BLF6G05LS-200RN

Power LDMOS transistor

Pinning information

Table Pin 1 2 3

Pinning Description drain gate source
[1] Connected to flange.
Ordering information

Simplified outline Graphic symbol
sym112
Table Ordering information

Type number

Package

Name Description

BLF6G05LS-200RN -
earless flanged LDMOST ceramic package 2 leads

Version SOT502B

Limiting values

Table Limiting values In accordance with the Absolute Maximum Rating System IEC

Symbol Parameter

Conditions
drain-source voltage
gate-source voltage
drain current

Tstg
storage temperature
junction temperature

Min Max Unit
+13 V
+150 C
225 C

Thermal characteristics

Table Symbol Rth j-case

Thermal characteristics

Parameter

Conditions
thermal resistance from junction to case Tcase = 80 C PL = 40 W

Unit K/W

BLF6G05LS-200RN

All information provided in this document is subject to legal disclaimers.

NXP B.V. All rights reserved.
2 of 10

NXP Semiconductors

BLF6G05LS-200RN

Power LDMOS transistor

Characteristics

Table Characteristics Tj = 25 C unless otherwise specified.

Symbol Parameter

V BR DSS drain-source breakdown voltage

VGS th VGSq
gate-source threshold voltage gate-source quiescent voltage
Pinning information 2 Ordering information 2 Limiting values. 2 Thermal characteristics 2 Characteristics 3 Application information. 3

Ruggedness in class-AB operation 3 Test information 4

BLF6G05LS-200RN

Power LDMOS transistor

Please be aware that important notices concerning this document and the product s described herein, have been included in section ‘Legal information’.

NXP B.V.

All rights reserved.

For more information, please visit For sales office addresses, please send an email to:

Date of release 8 November 2011 Document identifier BLF6G05LS-200RN

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BLF6G05LS-200RN,11 Datasheet file may be downloaded here without warranties.

Datasheet ID: BLF6G05LS-200RN,11 517628