AOWF10T60
AOWF10T60 Datasheet
AOW10T60/AOWF10T60
| Part | Datasheet |
|---|---|
AOWF10T60 |
AOWF10T60 (pdf) |
| Related Parts | Information |
|---|---|
AOW10T60 |
AOW10T60 |
| PDF Datasheet Preview |
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| AOW10T60/AOWF10T60 600V,10A N-Channel MOSFET Product Summary The AOW10T60 & AOWF10T60 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS Tj,max IDM RDS ON ,max Qg,typ Eoss 400V 100% UIS Tested 100% Rg Tested Top View TO-262 Bottom View Top View TO-262F Bottom View 700 40A < 23nC 3.4µJ AOW10T60 AOWF10T60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOW10T60 AOWF10T60 Drain-Source Voltage Gate-Source Voltage ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C,J Repetitive avalanche energy C,J Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt IDM IAR EAR EAS dv/dt 480 50 5 TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A |
| More datasheets: 82733002 | 82733001 | 82743008 | 82733006 | 82733007 | 2791 | CQ202-4N-2 | CQ202-4B-2 | CQ202-4M-2 | CQ202-4D-2 |
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