CQ202-4N-2

CQ202-4N-2 Datasheet


CQ202-4B-2 CQ202-4D-2 CQ202-4M-2 CQ202-4N-2

Part Datasheet
CQ202-4N-2 CQ202-4N-2 CQ202-4N-2 (pdf)
Related Parts Information
CQ202-4B-2 CQ202-4B-2 CQ202-4B-2
CQ202-4M-2 CQ202-4M-2 CQ202-4M-2
CQ202-4D-2 CQ202-4D-2 CQ202-4D-2
PDF Datasheet Preview
CQ202-4B-2 CQ202-4D-2 CQ202-4M-2 CQ202-4N-2

AMP TRIAC 200 THRU 800 VOLTS
w. c e n t r a l s e m i c o m

DESCRIPTION The CENTRAL SEMICONDUCTOR CQ202-4B-2 series type is an epoxy molded silicon triac designed for full wave AC control applications featuring gate triggering in all four 4 quadrants.

MARKING FULL PART NUMBER

TO-202-2 CASE

MAXIMUM RATINGS TC=25°C unless otherwise noted CQ202

SYMBOL -4B-2

Peak Repetitive Off-State Voltage

VDRM

RMS On-State Current TC=80°C

IT RMS

Peak Non-Repetitive Surge Current t=8.3ms ITSM

Peak Non-Repetitive Surge Current t=10ms ITSM

I2t Value for Fusing t=10ms

Peak Gate Power tp=10us Average Gate Power Dissipation Peak Gate Current tp=10us Storage Temperature Junction Temperature Thermal Resistance Thermal Resistance

PGM PG AV

IGM Tstg TJ ΘJA ΘJC

CQ202 -4D-2 400

CQ202 -4M-2 600
-40 to +150
-40 to +125

CQ202 -4N-2 800

ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted

SYMBOL TEST CONDITIONS

IDRM

Rated VDRM, RGK=1.0KΩ

IDRM

Rated VDRM, RGK=1.0KΩ, TC=125°C

VD=12V, QUAD I, II, III

VD=12V, QUAD IV

RGK=1.0KΩ

VD=12V, QUAD I, II, III

VD=12V, QUAD IV

ITM=6.0A, tp=380us
dv/dt

VDRM, TC=125°C

MAX 10 200 20 50 25

UNITS V A A2s W A °C °C
°C/W °C/W

UNITS uA mA V/us
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Datasheet ID: CQ202-4N-2 522779