AOT12N65_001
AOT12N65_001 Datasheet
AOT12N65/AOTF12N65/AOB12N65
| Part | Datasheet |
|---|---|
AOT12N65_001 |
AOT12N65_001 (pdf) |
| PDF Datasheet Preview |
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| AOT12N65/AOTF12N65/AOB12N65 650V, 12A N-Channel MOSFET The AOT12N65 & AOTF12N65 & AOB12N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Product Summary VDS ID at VGS=10V RDS ON at VGS=10V 100% UIS Tested 100% Rg Tested 12A < Top View TO-220 TO-220F TO-263 D2PAK AOT12N65 Orderable Part Number AOT12N65 AOTF12N65 AOTF12N65L AOB12N65L AOTF12N65 Package Type TO-220 Pb Free TO-220F Pb Free TO-220F Green TO-263 Green AOB12N65 Form Tube Tape & Reel Minimum Order Quantity 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT B 12N65 Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC |
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