AON6450L

AON6450L Datasheet

AON6450L

Part	Datasheet
AON6450L	AON6450L (pdf)

Related Parts	Information
AON6450L_001	AON6450L_001

PDF Datasheet Preview
AON6450L N-Channel SDMOS TM Power Transistor Product Summary The AON6450L is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Parameter VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 7V - RoHS Compliant - Halogen Free 100% UIS Tested! 100% R g Tested! 100V 52A < < Top View Fits SOIC8 footprint ! DFN5X6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25°C TC=100°C Pulsed Drain Current C Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±25 52 33 110 9 7 41 84 83 33 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State 14 40 Maximum Junction-to-Case Steady-State Max 17 55 Units V A A mJ W °C Units °C/W °C/W °C/W Page 1 of 7

PDF Datasheet Preview

AON6450L

N-Channel SDMOS TM Power Transistor

Product Summary

The AON6450L is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications.

Parameter VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 7V
- RoHS Compliant - Halogen Free
100% UIS Tested! 100% R g Tested!
100V 52A < <

Top View

Fits SOIC8 footprint !

DFN5X6

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

TC=25°C TC=100°C

Pulsed Drain Current C

Continuous Drain Current

TA=25°C TA=70°C

IDSM

Avalanche Current C

Repetitive avalanche energy L=0.1mH C

TC=25°C Power Dissipation B TC=100°C

TA=25°C Power Dissipation A TA=70°C

PDSM

Junction and Storage Temperature Range

TJ, TSTG

Maximum 100 ±25 52 33 110 9 7 41 84 83 33
-55 to 150

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State
14 40

Maximum Junction-to-Case

Steady-State

Max 17 55

Units V A

A mJ W °C

Units °C/W °C/W °C/W

Page 1 of 7

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Datasheet ID: AON6450L 516260