AON6418
AON6418 Datasheet
AON6418
| Part | Datasheet |
|---|---|
AON6418 |
AON6418 (pdf) |
| PDF Datasheet Preview |
|---|
| AON6418 30V N-Channel AlphaMOS • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS on at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 4.5V Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested 30V 32A < < Top View DFN5X6 Bottom View PIN1 Top View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentG TC=25°C TC=100°C Pulsed Drain Current C Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C Avalanche energy L=0.05mH C VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 32 25 127 27 22 34 29 36 25 10 6 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State 17 44 Maximum Junction-to-Case Steady-State |
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