AON6410

AON6410 Datasheet

AON6410

Part	Datasheet
AON6410	AON6410 (pdf)

PDF Datasheet Preview
AON6410 30V N-Channel MOSFET The AON6410 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Product Summary VDS V = 30V ID = 24A VGS = 10V RDS ON < VGS = 10V RDS ON < VGS = 4.5V 100% UIS Tested 100% Rg Tested Top View DFN5X6 Bottom View PIN1 Top View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current BJ TC=100°C Pulsed Drain Current Continuous Drain TA=25°C Current H TA=70°C IDSM Avalanche Current C Repetitive avalanche energy L=0.3mH C TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 24 19 120 10 8 30 135 35 14 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t 10s Steady-State 24 53 30 64 Maximum Junction-to-Case C Steady-State Units V A A mJ W °C Units °C/W °C/W °C/W

PDF Datasheet Preview

AON6410
30V N-Channel MOSFET

The AON6410 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.

Product Summary

VDS V = 30V ID = 24A VGS = 10V RDS ON < VGS = 10V RDS ON < VGS = 4.5V
100% UIS Tested 100% Rg Tested

Top View

DFN5X6 Bottom View

PIN1

Top View

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain TC=25°C

Current BJ

TC=100°C

Pulsed Drain Current

Continuous Drain TA=25°C

Current H

TA=70°C

IDSM

Avalanche Current C

Repetitive avalanche energy L=0.3mH C

TC=25°C Power Dissipation B TC=100°C

TA=25°C Power Dissipation A TA=70°C

PDSM

Junction and Storage Temperature Range TJ, TSTG

Maximum 30 ±12 24 19 120 10 8 30 135 35 14 2
-55 to 150

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
t 10s Steady-State
24 53
30 64

Maximum Junction-to-Case C

Steady-State

Units V A

A mJ W °C

Units °C/W °C/W °C/W

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Datasheet ID: AON6410 516257