AON6206
AON6206 Datasheet
AON6206
| Part | Datasheet |
|---|---|
AON6206 |
AON6206 (pdf) |
| PDF Datasheet Preview |
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| AON6206 30V N-Channel MOSFET Product Summary The AON6206 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS ON and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 4.5V 100% UIS Tested 100% Rg Tested 30V 24A Top View DFN5X6 Bottom View PIN1 Top View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current G TC=25°C TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 24 19 150 20 16 30 45 31 12 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State 25 55 Maximum Junction-to-Case Steady-State Max 30 65 4 Units V A |
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