AOL1702
AOL1702 Datasheet
AOL1702
| Part | Datasheet |
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AOL1702 |
AOL1702 (pdf) |
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| AOL1702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM The AOL1702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. -RoHS Compliant -Halogen and Antimony Free Green Device* VDS V = 30V ID =70A VGS = 10V RDS ON < VGS = 10V RDS ON < VGS = 4.5V UIS Tested Rg,Ciss,Coss,Crss Tested Ultra SO-8TM Top View Bottom tab connected to drain Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C G Current B TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C CurrentA TA=70°C IDSM Avalanche Current C Repetitive avalanche energy L=0.3mH C TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode Maximum 30 ±12 70 52 100 14 11 30 135 58 29 -55 to 175 Units V A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A |
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