AOL1424
AOL1424 Datasheet
AOL1424 N-Channel Enhancement Mode Field Effect Transistor
| Part | Datasheet |
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AOL1424 |
AOL1424 (pdf) |
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| AOL1424 N-Channel Enhancement Mode Field Effect Transistor The AOL1424 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 4.5V,while retaining a 20V VGS MAX rating. It is ESD protected.This device is suitable for use as a load switch. -RoHS Compliant -Halogen and Antimony Free Green Device* VDS V = 30V ID = 70A VGS = 10V RDS ON < VGS = 10V RDS ON < VGS = 4.5V ESD Protected UIS Tested Rg,Ciss,Coss,Crss Tested Ultra SO-8TM Top View Bottom tab connected to drain Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current B TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current A TA=70°C IDSM Avalanche Current H Repetitive avalanche energy L=0.3mH H TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range PDSM TJ, TSTG Maximum 30 ±20 70 50 120 15 12 30 135 50 25 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t 10s Steady-State 20 45 Maximum Junction-to-Case D Steady-State Max 24 55 Units V A mJ W W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AOL1424 |
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