AOL1422
AOL1422 Datasheet
AOL1422 N-Channel Enhancement Mode Field Effect Transistor
| Part | Datasheet |
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AOL1422 |
AOL1422 (pdf) |
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| AOL1422 N-Channel Enhancement Mode Field Effect Transistor The AOL1422 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is ESD protected and it is suitable for use in load switching and general purpose applications. -RoHS Compliant -Halogen and Antimony Free Green Device* Ultra SO-8TM Top View VDS V = 30V ID = 85A VGS = 10V RDS ON < VGS = 10V RDS ON < VGS = 4.5V Rg,Ciss,Coss,Crss Tested Bottom tab connected to drain Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current B,H TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current G TA=70°C IDSM TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 85 150 19 15 100 50 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t 10s Steady-State 25 60 Maximum Junction-to-Case D Steady-State Alpha & Omega Semiconductor, Ltd. Units V Units °C/W °C/W °C/W AOL1422 Electrical Characteristics TJ=25°C unless otherwise noted |
| More datasheets: 310J101-20-CA006 | 310J101-10-CA006 | 310J101-20-CA003 | 310J101-10-CA003 | 310J101-14-CA003 | 310J101-16-CA003 | 310J101-26-CA003 | 310J101-14-CA006 | 310J101-26-CA006 | BAS70SV |
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