BAS70SV 70 V Dual-Schottky Barrier Diodes
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BAS70SV 70 V Dual-Schottky Barrier Diodes June 2013 BAS70SV 70 V Dual-Schottky Barrier Diodes • Low Forward-Voltage Drop • Low Capacitance • Low Leakage Current • Fast Switching • Ultra-Small Surface-Mount Package • Lead Free by Design / RoHS Compliant • Green Compound • 0.6mm Maximum Package Height Pin1 SOT-563F BAS70SV Marking AD ELECTRICAL SYMBOL Note Pinouts are symmetrical. Pin 1 & 4 are interchangeable. The placement of the device in the carrier tape can be of either orientation. Ordering Information Part Number BAS70SV Marking AD Package SOT-563F 6L Packing Method Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Parameter Value Units VRRM IF AV IFSM -55 to +150 Thermal Characteristics Parameter Power Dissipation Thermal Resistance, Junction to Ambient 1 Note: Device mounted on board compliant to JESD51-2 and JESD51-3 standards. Value 200 625 Units mW °C/W 2010 Fairchild Semiconductor Corporation BAS70SV 70 V Dual-Schottky Barrier Diodes Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Parameter Test Condition Breakdown Voltage IR = 100 uA VR = 50 V VR = 70 V Forward Voltage IF = 1 mA IF = 15 mA Capacitance VR = 0 V, f = 1 MHz Min. 70 Typ. 93 365 855 Max. 410 1000 Units V uA mV ns pF |
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