AOI452A

AOI452A Datasheet

AOI452A N-Channel SDMOSTM Power Transistor

Part	Datasheet
AOI452A	AOI452A (pdf)

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AOI452A N-Channel SDMOSTM Power Transistor The AOI452A is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS V =25V ID = 55A RDS ON < RDS ON < VGS = 10V VGS = 10V VGS = 4.5V - RoHS Compliant - Halogen Free 100% UIS Tested! 100% R g Tested! TO-251A IPAK Top View Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current G TC=25°C TC=100°C Pulsed Drain Current C Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 25 ±20 55 43 120 16 13 27 36 50 25 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t 10s Steady-State 17 47 Maximum Junction-to-Case Steady-State Units V A mJ W W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.

PDF Datasheet Preview

AOI452A N-Channel SDMOSTM Power Transistor

The AOI452A is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications.

VDS V =25V ID = 55A RDS ON < RDS ON <

VGS = 10V VGS = 10V VGS = 4.5V
- RoHS Compliant - Halogen Free
100% UIS Tested! 100% R g Tested!

TO-251A

IPAK

Top View

Bottom View

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current G

TC=25°C TC=100°C

Pulsed Drain Current C

Continuous Drain Current

TA=25°C TA=70°C

IDSM

Avalanche Current C

Repetitive avalanche energy L=0.1mH C

TC=25°C Power Dissipation B TC=100°C

TA=25°C Power Dissipation A TA=70°C

PDSM

Junction and Storage Temperature Range

TJ, TSTG

Maximum 25 ±20 55 43 120 16 13 27 36 50 25
-55 to 175

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
t 10s Steady-State
17 47

Maximum Junction-to-Case

Steady-State

Units V

A mJ W

W °C

Units °C/W °C/W °C/W

Alpha & Omega Semiconductor, Ltd.

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Datasheet ID: AOI452A 516238