AOD607_DELTA
AOD607_DELTA Datasheet
AOD607 Complementary Enhancement Mode Field Effect Transistor
| Part | Datasheet |
|---|---|
AOD607_DELTA |
AOD607_DELTA (pdf) |
| Related Parts | Information |
|---|---|
|
AOD607_001 |
AOD607_001 |
| PDF Datasheet Preview |
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| AOD607 Complementary Enhancement Mode Field Effect Transistor The AOD607 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. -RoHS Compliant -Halogen Free* n-channel p-channel VDS V = 30V -30V ID = 12A VGS=10V -12A VGS = -10V RDS ON RDS ON < 25 VGS=10V < 37 VGS = -10V < 34 VGS=4.5V < 62 VGS = -4.5V 100% UIS Tested! Top View TO-252-4L D-PAK D1/D2 Bottom View Top View Drain Connected to Tab D1/D2 G2 S2 G1 S1 G1 S1 n-channel G2 S2 p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Max p-channel Drain-Source Voltage Gate-Source Voltage ±20 ±20 Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C |
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