FDR6674A

FDR6674A Datasheet

FDR6674A

Part	Datasheet
FDR6674A	FDR6674A (pdf)

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FDR6674A April 2001 FDR6674A 30V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package. • Synchronous rectifier • DC/DC converter • A, 30 V. RDS ON = VGS = V RDS ON = VGS = 10 V • High performance trench technology for extremely low RDS ON • High power and current handling capability in a smaller footprint than SO8 SuperSOT -8 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size .6674A FDR6674A 13’’ Ratings 30 ±12 50 -55 to +150 70 20 Tape width 12mm Units °C/W °C/W Quantity 2500 units Fairchild Semiconductor Corporation FDR6674A Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V mV/°C IGSSF Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR VGS = V , VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient RDS on Static

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FDR6674A

April 2001

FDR6674A
30V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package.
• Synchronous rectifier
• DC/DC converter
• A, 30 V. RDS ON = VGS = V RDS ON = VGS = 10 V
• High performance trench technology for extremely low RDS ON
• High power and current handling capability in a smaller footprint than SO8

SuperSOT -8

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for Single Operation

Note 1a

Note 1b

Note 1c

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size
.6674A

FDR6674A
13’’

Ratings
30 ±12 50 -55 to +150
70 20

Tape width 12mm

Units
°C/W °C/W

Quantity 2500 units

Fairchild Semiconductor Corporation

FDR6674A

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage VGS = 0 V, ID = 250 µA

Breakdown Voltage Temperature Coefficient

ID = 250 µA, Referenced to 25°C

IDSS

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V
mV/°C

IGSSF

Leakage, Forward

VGS = 12 V, VDS = 0 V
100 nA

IGSSR

VGS = V , VDS = 0 V

On Characteristics Note 2

VGS th

Gate Threshold Voltage

Gate Threshold Voltage Temperature Coefficient

RDS on

Static

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Datasheet ID: FDR6674A 514276