AOD512
AOD512 Datasheet
AOD512
| Part | Datasheet |
|---|---|
AOD512 |
AOD512 (pdf) |
| PDF Datasheet Preview |
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| AOD512 30V N-Channel AlphaMOS • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS on at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 4.5V Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested 30V 70A < < TopView TO252 DPAK Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current G TC=25°C TC=100°C Pulsed Drain Current C Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C Avalanche energy L=0.1mH C VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 70 55 280 27 22 55 151 36 83 33 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State 16 41 Maximum Junction-to-Case Steady-State Max 20 50 |
| More datasheets: CY7C1380C-133AC | CY7C1382C-167AC | CY7C1380C-167BZI | 26800B-459 | HMC285E | 103240-HMC285 | 37790 | 37792 | 37793 | TN01 025 0001 2 |
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