AOD452
AOD452 Datasheet
AOD452 N-Channel Enhancement Mode Field Effect Transistor
| Part | Datasheet |
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AOD452 |
AOD452 (pdf) |
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| AOD452 N-Channel Enhancement Mode Field Effect Transistor The AOD452 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. VDS V =25V ID = 55 A VGS = 10V RDS ON < VGS = 10V RDS ON < 14 VGS = 4.5V 100% UIS tested 100% Rg tested TO-252 Top View D-PAK Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Pulsed Forward Diode CurrentC Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 25 ±20 55 43 150 35 61 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Maximum Junction-to-TAB B t 10s Steady-State Steady-State Steady-State Typ 39 Max 20 50 Units V W °C Units °C/W °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AOD452 Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions Min Typ Max Units STATIC PARAMETERS |
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