AO8807L
AO8807L Datasheet
AO8807L Dual P-Channel Enhancement Mode Field Effect Transistor
| Part | Datasheet |
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AO8807L |
AO8807L (pdf) |
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| AO8807L Dual P-Channel Enhancement Mode Field Effect Transistor The AO8807L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. - RoHS Compliant -Halogen Free VDS V = -12V ID = A VGS = -4.5V RDS ON < VGS = -4.5V RDS ON < VGS = -2.5V RDS ON < VGS = -1.8V ESD Protected! TSSOP-8 Top View D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 6 S2 5 G2 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C TA=25°C Power Dissipation B TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum -12 ±8 -5 -60 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient AD t 10s Steady-State 73 96 90 125 Maximum Junction-to-Lead Steady-State Units V A W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO8807L Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current |
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