AO6701
AO6701 Datasheet
AO6701
| Part | Datasheet |
|---|---|
AO6701 |
AO6701 (pdf) |
| PDF Datasheet Preview |
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| AO6701 30V P-Channel MOSFET The AO6701 uses advanced trench technology to provide excellent R DS ON and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Product Summary VDS V = -30V ID = -2.3A VGS = -10V RDS ON < VGS = -10V RDS ON < VGS = -4.5V RDS ON < VGS = -2.5V SCHOTTKY VDS V = 20V IF = 1A TSOP6 Top View Bottom View Top View Pin1 A1 S2 G3 6K 5 N/C 4D Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C TA=70°C Continuous Forward Current A Pulsed Forward Current B TA=25°C TA=70°C Power Dissipation TA=25°C TA=70°C Junction and Storage Temperature Range TJ, TSTG MOSFET -30 ±12 -15 -55 to 150 Parameter Thermal Characteristics MOSFET Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Steady-State Thermal Characteristics Schottky Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Steady-State Typ 78 106 64 Schottky |
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