AO4946
AO4946 Datasheet
AO4946
| Part | Datasheet |
|---|---|
AO4946 |
AO4946 (pdf) |
| PDF Datasheet Preview |
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| AO4946 30V Dual N-Channel MOSFET SRFET TM SRFET TM The AO4946 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON and low gate charge. This device is suitable for use as a low and high side switch in SMPS and general purpose applications. Product Summary VDS V = 30V ID = 8.6A VGS = 10V RDS ON < VGS = 10V RDS ON < VGS = 4.5V 100% UIS Tested 100% Rg Tested Top View SOIC-8 Bottom View Top View D1/S2 G2 S1 G1 D2 D1/S2 D1/S2 G1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B Avalanche Current B Repetitive avalanche energy L=0.3mH B Power Dissipation TA=25°C TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 40 16 38 2 -55 to 150 G2 S1 Thermal Characteristics Parameter Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A t 10s Steady-State 48 74 Maximum Junction-to-Lead C Steady-State Max 90 40 |
| More datasheets: AT49BV4096A-12TI | AT49BV4096A-12RI | AT49BV4096A-12RC | T5743P3-TGQ | T5743P3-TGS | T5743P6-TGS | T5743P6-TGQ | DFR0031-B | 74F158APC | 50738361531600F |
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