AO4830L
AO4830L Datasheet
AO4830L Dual N-Channel Enhancement Mode Field Effect Transistor
| Part | Datasheet |
|---|---|
AO4830L |
AO4830L (pdf) |
| PDF Datasheet Preview |
|---|
| AO4830L Dual N-Channel Enhancement Mode Field Effect Transistor The AO4830L uses advanced trench technology to provide excellent RDS ON and low gate charge This device is suitable for use as a load switch or in PWM applications. VDS V = 80V ID = 3.5A RDS ON < VGS = 10V VGS = 10V - RoHS Compliant - Halogen Free 100% UIS Tested! 100% R g Tested! SOIC-8 D SOIC-8 S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH C Power Dissipation B TA=25°C TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum 80 ±30 18 16 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t 10s Steady-State 48 74 Steady-State Max 90 40 Units V mJ W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4830L Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions |
| More datasheets: B57621C472J62 | B57621C224J62 | B57621C222J62 | B57621C333K62 | B57621C223K62 | B57621C222K62 | B57621C223J62 | 1240135403 | 3414N/39HH | 2798 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived AO4830L Datasheet file may be downloaded here without warranties.