AO4806L

AO4806L Datasheet

AO4806 Dual N-Channel Enhancement Mode Field Effect Transistor

Part	Datasheet
AO4806L	AO4806L (pdf)

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AO4806 Dual N-Channel Enhancement Mode Field Effect Transistor The AO4806 uses advanced trench technology to provide excellent RDS ON and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Standard Product AO4806 is Pb-free meets ROHS & Sony 259 specifications . AO4806L is a Green Product ordering option. AO4806 and AO4806L are electrically identical. VDS V = 20V ID = 9.4A VGS = 10V RDS ON < VGS = 10V RDS ON < VGS = 4.5V RDS ON < VGS = 2.5V RDS ON < VGS = 1.8V ESD Rating 2000V HBM S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B Power Dissipation TA=25°C TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 40 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t 10s Steady-State 45 72 Steady-State Max 110 40 Units V W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4806 Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions STATIC PARAMETERS BVDSS IDSS IGSS BVGSO VGS th ID ON RDS ON gFS VSD IS Drain-Source Breakdown Voltage ID=250µA, VGS=0V Zero Gate Voltage Drain Current VDS=16V, VGS=0V TJ=55°C Gate-Source leakage current

PDF Datasheet Preview

AO4806 Dual N-Channel Enhancement Mode Field Effect Transistor
The AO4806 uses advanced trench technology to provide excellent RDS ON and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Standard Product AO4806 is Pb-free meets ROHS & Sony 259 specifications . AO4806L is a Green Product ordering option. AO4806 and AO4806L are electrically identical.

VDS V = 20V ID = 9.4A VGS = 10V RDS ON < VGS = 10V RDS ON < VGS = 4.5V RDS ON < VGS = 2.5V RDS ON < VGS = 1.8V ESD Rating 2000V HBM

S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1

SOIC-8

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

TA=25°C

Current A

TA=70°C

Pulsed Drain Current B

Power Dissipation

TA=25°C TA=70°C

Junction and Storage Temperature Range TJ, TSTG

Maximum 20 ±12 40 2
-55 to 150

Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
t 10s Steady-State
45 72

Steady-State

Max 110 40

Units V

W °C

Units °C/W °C/W °C/W

Alpha & Omega Semiconductor, Ltd.

AO4806

Electrical Characteristics TJ=25°C unless otherwise noted

Parameter

Conditions

STATIC PARAMETERS

BVDSS IDSS IGSS BVGSO VGS th ID ON

RDS ON
gFS VSD IS

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

Zero Gate Voltage Drain Current

VDS=16V, VGS=0V

TJ=55°C

Gate-Source leakage current

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Datasheet ID: AO4806L 516193