AO4728
AO4728 Datasheet
AO4728
| Part | Datasheet |
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AO4728 |
AO4728 (pdf) |
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| AO4728 30V N-Channel MOSFET Product Summary SRFETTM AO4728 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is ideally suited for use as a low side switch in CPU core power conversion. VDS V = 30V ID = 20A RDS ON < 4.3mΩ RDS ON < 6mΩ VGS = 10V VGS = 10V VGS = 4.5V 100% UIS Tested 100% Rg Tested Top View SOIC-8 Bottom View SRFETTM Soft Recovery MOSFET Integrated Schottky Diode Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25°C TC=70°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH C Power Dissipation B TC=25°C TC=70°C Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 17 146 40 80 2 -55 to 150 Units V A mJ W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t 10s Steady-State 31 59 40 75 Maximum Junction-to-Lead Steady-State Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4728 Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions |
| More datasheets: ECJ-1VBFJ475K | AK4393VM | SG-8002DC 45.0000M-PCBS | SG-8002DC 5.0000M-PCBS | SG-8002DB-MPT | SG-8002DC-MPT | 3318G-1-202A | 3318G-1-503A | 3318G-1-103A | 3318G-1-203A |
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