AO4710L_101
AO4710L_101 Datasheet
AO4710 N-Channel Enhancement Mode Field Effect Transistor
| Part | Datasheet |
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AO4710L_101 |
AO4710L_101 (pdf) |
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| AO4710 N-Channel Enhancement Mode Field Effect Transistor SRFET TM SRFET TM The AO4710/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON , and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.AO4710 and AO4710L are electrically identical. -RoHS Compliant -AO4710L is Halogen Free VDS V = 30V ID =12.7A VGS = 10V RDS ON < VGS = 10V RDS ON < VGS = 4.5V UIS TESTED! Rg,Ciss,Coss,Crss Tested SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current AF TA=70°C IDSM Pulsed Drain Current B Avalanche Current C Repetitive avalanche energy L=0.3mH C Power Dissipation TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 10 60 22 73 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t 10s Steady-State 32 60 Maximum Junction-to-Lead C Steady-State Max 40 75 24 Units V Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4710 Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions Min Typ Max Units |
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