AO4701
AO4701 Datasheet
AO4701
| Part | Datasheet |
|---|---|
AO4701 |
AO4701 (pdf) |
| PDF Datasheet Preview |
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| AO4701 30V P-Channel MOSFET with Schottky Diode Product Summary The AO4701 uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch. VDS ID at VGS=-10V RDS ON at VGS=-10V RDS ON at VGS =-4.5V RDS ON at VGS =-2.5V 100% UIS Tested 100% Rg Tested Schottky VDS V =30V, IF=3A, -30V -5A < < < Top View SOIC-8 Bottom View Top View Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter MOSFET Drain-Source Voltage Gate-Source Voltage ±12 Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C IAS, IAR EAS, EAR Continuous Forward TA=25°C Current TA=70°C TA=25°C Power Dissipation B TA=70°C Junction and Storage Temperature Range TJ, TSTG -55 to 150 Thermal Characteristics Parameter MOSFET Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State 48 74 Maximum Junction-to-Lead Steady-State |
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