FDJ129P_F077

FDJ129P_F077 Datasheet

FDJ129P

Part	Datasheet
FDJ129P_F077	FDJ129P_F077 (pdf)

Related Parts	Information
FDJ129P	FDJ129P

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FDJ129P November 2007 FDJ129P P-Channel Vgs Specified MOSFET This P-Channel -2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • Battery management • Load switch • A, V. RDS ON = 70 VGS = V RDS ON = 120 VGS = V • Low gate charge • High performance trench technology for extremely low RDS ON • Compact industry standard SC75-6 surface mount package • RoHS Compliant SC75-6 FLMP Absolute Maximum Ratings TA=25oC unless otherwise noted Parameter VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a PD TJ, TSTG Power Dissipation for Single Operation Note 1a Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a Package Marking and Ordering Information Device Marking Device Reel Size FDJ129P 7’’ Bottom Drain Ratings ± 12 to +150 Tape width 8mm Units V A W °C °C/W Quantity 3000 units Fairchild Semiconductor Corporation FDJ129P Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = µA ID = µA,Referenced to 25°C VDS = V, VGS = 0 V VGS = 12 V, VDS = 0 V VGS = V, VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on Drain Current

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FDJ129P

November 2007

FDJ129P

P-Channel Vgs Specified MOSFET

This P-Channel -2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
• Battery management
• Load switch
• A, V.

RDS ON = 70 VGS = V RDS ON = 120 VGS = V
• Low gate charge
• High performance trench technology for extremely low RDS ON
• Compact industry standard SC75-6 surface mount package
• RoHS Compliant

SC75-6 FLMP

Absolute Maximum Ratings TA=25oC unless otherwise noted

Parameter

VDSS VGSS

Drain-Source Voltage Gate-Source Voltage

Drain Current Continuous

Pulsed

Note 1a

PD TJ, TSTG

Power Dissipation for Single Operation

Note 1a

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Note 1a
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDJ129P
7’’

Bottom Drain

Ratings
± 12 to +150

Tape width 8mm

Units

V A W °C
°C/W

Quantity 3000 units

Fairchild Semiconductor Corporation

FDJ129P

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF

Leakage, Forward

IGSSR

VGS = 0 V, ID = µA

ID = µA,Referenced to 25°C

VDS = V, VGS = 0 V VGS = 12 V, VDS = 0 V VGS = V, VDS = 0 V

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

ID on

Drain Current

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Datasheet ID: FDJ129P_F077 514188