AO4448L

AO4448L Datasheet

AO4448L

Part	Datasheet
AO4448L	AO4448L (pdf)

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AO4448L 80V N-Channel MOSFET SDMOS TM The AO4448L is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Product Summary VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 7V 100% UIS Tested 100% Rg Tested 80V 10A < < SOIC-8 Top View Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum 80 ±25 10 8 70 45 101 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State 31 59 Maximum Junction-to-Lead Steady-State Max 40 75 24 Units V A mJ W °C Units °C/W °C/W °C/W Page 1 of 6 AO4448L Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions

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AO4448L
80V N-Channel MOSFET SDMOS TM

The AO4448L is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications.

Product Summary

VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 7V
100% UIS Tested 100% Rg Tested
80V 10A < <

SOIC-8

Top View

Bottom View

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain TA=25°C

Current

TA=70°C

Pulsed Drain Current C

Avalanche Current C

Avalanche energy L=0.1mH C

IDM IAS, IAR EAS, EAR

TA=25°C Power Dissipation B TA=70°C

Junction and Storage Temperature Range

TJ, TSTG

Maximum 80 ±25 10 8 70 45 101 2
-55 to 150

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State
31 59

Maximum Junction-to-Lead

Steady-State

Max 40 75 24

Units V

A mJ W °C

Units °C/W °C/W °C/W

Page 1 of 6

AO4448L

Electrical Characteristics TJ=25°C unless otherwise noted

Parameter

Conditions

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Datasheet ID: AO4448L 516170