AO4446
AO4446 Datasheet
AO4446
| Part | Datasheet |
|---|---|
AO4446 |
AO4446 (pdf) |
| PDF Datasheet Preview |
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| AO4446 30V N-Channel MOSFET The AO4446 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. This device is ideally suited for use in PWM applications. Product Summary VDS V = 30V ID = 15A VGS = 10V RDS ON < VGS = 10V RDS ON < VGS = 4.5V 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B Avalanche Current B Repetitive avalanche energy L=0.1mH B Power Dissipation TA=25°C TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 15 12 40 20 50 3 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t 10s Steady-State 33 59 40 75 Maximum Junction-to-Lead C Steady-State Units V A mJ W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4446 Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions Min Typ Max Units |
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