AO4446

AO4446 Datasheet


AO4446

Part Datasheet
AO4446 AO4446 AO4446 (pdf)
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AO4446
30V N-Channel MOSFET

The AO4446 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. This device is ideally suited for use in PWM applications.

Product Summary

VDS V = 30V ID = 15A VGS = 10V RDS ON < VGS = 10V RDS ON < VGS = 4.5V
100% UIS Tested 100% Rg Tested

SOIC-8

Top View

Bottom View

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain TA=25°C

Current A

TA=70°C

Pulsed Drain Current B

Avalanche Current B

Repetitive avalanche energy L=0.1mH B

Power Dissipation

TA=25°C TA=70°C

Junction and Storage Temperature Range TJ, TSTG

Maximum 30 ±20 15 12 40 20 50 3
-55 to 150

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
t 10s Steady-State
33 59
40 75

Maximum Junction-to-Lead C

Steady-State

Units V

A mJ W °C

Units °C/W °C/W °C/W

Alpha & Omega Semiconductor, Ltd.

AO4446

Electrical Characteristics TJ=25°C unless otherwise noted

Parameter

Conditions

Min Typ Max Units
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Datasheet ID: AO4446 516169