AO4433
AO4433 Datasheet
AO4433
| Part | Datasheet |
|---|---|
AO4433 |
AO4433 (pdf) |
| PDF Datasheet Preview |
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| AO4433 30V P-Channel MOSFET The AO4433 uses advanced trench technology to provide excellent RDS ON and ultra-low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS V = -30V ID = -11 A VGS = -20V RDS ON < VGS = -20V RDS ON < VGS = -10V RDS ON < VGS= -5V ESD Protected 100% UIS Tested 100% Rg Tested Top View SOIC-8 Bottom Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Avalanche Current B Repetitive avalanche energy 0.1mH B Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±25 -11 -50 3 -36 65 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A t 10s Steady-State 28 54 40 75 Maximum Junction-to-Lead C Steady-State Units V W A mJ °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4433 Electrical Characteristics TJ=25°C unless otherwise noted |
| More datasheets: AT25HP512W2-10SI-2.7-T | AT25HP512W210SU2.7 | BDW63D-S | BDW63B-S | BDW63C-S | BDW63A-S | 301-9000-07 | M33402 SL002 | M33402 SL005 | M33402 SL001 |
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