AO4433

AO4433 Datasheet


AO4433

Part Datasheet
AO4433 AO4433 AO4433 (pdf)
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AO4433
30V P-Channel MOSFET

The AO4433 uses advanced trench technology to provide excellent RDS ON and ultra-low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.

Product Summary

VDS V = -30V

ID = -11 A

VGS = -20V

RDS ON < VGS = -20V

RDS ON < VGS = -10V

RDS ON < VGS= -5V

ESD Protected 100% UIS Tested 100% Rg Tested

Top View

SOIC-8 Bottom

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain TA=25°C

Current AF

TA=70°C

Pulsed Drain Current B

TA=25°C Power Dissipation A TA=70°C

Avalanche Current B

Repetitive avalanche energy 0.1mH B

Junction and Storage Temperature Range TJ, TSTG

Maximum -30 ±25 -11 -50 3 -36 65
-55 to 150

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A
t 10s Steady-State
28 54
40 75

Maximum Junction-to-Lead C

Steady-State

Units V

W A mJ °C

Units °C/W °C/W °C/W

Alpha & Omega Semiconductor, Ltd.

AO4433

Electrical Characteristics TJ=25°C unless otherwise noted
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Datasheet ID: AO4433 516165