AO4407 30V P-Channel MOSFET
Part | Datasheet |
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AO4407L (pdf) |
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AO4407 30V P-Channel MOSFET The AO4407/L uses advanced trench technology to provide excellent RDS ON , and ultra-low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.AO4407 and AO4407L are electrically identical. -RoHS Compliant -AO4407L is Halogen Free VDS V = -30V ID = -12 A VGS = -20V RDS ON < VGS = -20V RDS ON < VGS = -10V RDS ON < VGS = -5V 100% UIS Tested 100% Rg Tested Top View SOIC-8 Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Maximum Drain-Source Voltage Gate-Source Voltage ±25 Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B Avalanche Current G Repetitive avalanche energy L=0.3mH G TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range TJ, TSTG -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t 10s Steady-State 32 60 40 75 Maximum Junction-to-Lead C Steady-State Alpha & Omega Semiconductor, Ltd. Units V A mJ W °C Units °C/W °C/W °C/W AO4407 Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V IDSS |
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