AO4407L

AO4407L Datasheet


AO4407 30V P-Channel MOSFET

Part Datasheet
AO4407L AO4407L AO4407L (pdf)
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AO4407 30V P-Channel MOSFET

The AO4407/L uses advanced trench technology to provide excellent RDS ON , and ultra-low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.AO4407 and AO4407L are electrically identical. -RoHS Compliant -AO4407L is Halogen Free

VDS V = -30V ID = -12 A VGS = -20V RDS ON < VGS = -20V RDS ON < VGS = -10V RDS ON < VGS = -5V
100% UIS Tested 100% Rg Tested

Top View

SOIC-8 Bottom View

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Maximum

Drain-Source Voltage

Gate-Source Voltage
±25

Continuous Drain TA=25°C

Current AF

TA=70°C

Pulsed Drain Current B

Avalanche Current G

Repetitive avalanche energy L=0.3mH G

TA=25°C Power Dissipation A TA=70°C

Junction and Storage Temperature Range TJ, TSTG
-55 to 150

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
t 10s Steady-State
32 60
40 75

Maximum Junction-to-Lead C

Steady-State

Alpha & Omega Semiconductor, Ltd.

Units V A mJ W °C

Units °C/W °C/W °C/W

AO4407

Electrical Characteristics TJ=25°C unless otherwise noted

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=-250µA, VGS=0V

IDSS
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Datasheet ID: AO4407L 516162