AO4264
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AO4264_101 (pdf) |
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AO4264_DELTA |
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AO4264 60V N-Channel AlphaMOS • Trench Power AlphaMOS αMOS MV technology • Low RDS ON • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS=4.5V 60V 12A < < • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View Orderable Part Number AO4264 Package Type SO-8 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C VDS Spike 10µs VSPIKE TA=25°C Power Dissipation B TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 12 9 48 36 65 72 -55 to 150 Units V A mJ V W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State |
More datasheets: 74LVTH162240MTD | 74LVT162240MEA | 74LVTH162240MEX | 74LVT162240MTDX | 74LVT162240MEAX | 74LVTH162240MEA | 74LVT162240MTD | HK-4000-0067-3 | 20 INCH-G-4V-REF | IRM-8752K-1 |
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