AO3421L

AO3421L Datasheet


AO3421 P-Channel Enhancement Mode Field Effect Transistor

Part Datasheet
AO3421L AO3421L AO3421L (pdf)
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AO3421 P-Channel Enhancement Mode Field Effect Transistor

The AO3421/L uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. AO3421 and AO3421L are electrically identical. -RoHS Compliant -AO3421L is Halogen Free

VDS V = -30V ID = A VGS = -10V RDS ON < VGS = -10V RDS ON < VGS = -4.5V

TO-236 SOT-23 Top View

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain TA=25°C

Current A

TA=70°C

Pulsed Drain Current B

TA=25°C Power Dissipation A TA=70°C

Junction and Storage Temperature Range TJ, TSTG

Maximum -30 ±20 -20 1
-55 to 150

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
t 10s Steady-State
70 100

Maximum Junction-to-Lead C

Steady-State

Max 90 125 80

Units V

W °C

Units °C/W °C/W °C/W

Alpha & Omega Semiconductor, Ltd.

AO3421

Electrical Characteristics TJ=25°C unless otherwise noted

Parameter

Conditions

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=-250µA, VGS=0V

IDSS

Zero Gate Voltage Drain Current

VDS=-24V, VGS=0V

TJ=55°C

IGSS

Gate-Body leakage current
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Datasheet ID: AO3421L 516157