AO3421L
AO3421L Datasheet
AO3421 P-Channel Enhancement Mode Field Effect Transistor
| Part | Datasheet |
|---|---|
AO3421L |
AO3421L (pdf) |
| PDF Datasheet Preview |
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| AO3421 P-Channel Enhancement Mode Field Effect Transistor The AO3421/L uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. AO3421 and AO3421L are electrically identical. -RoHS Compliant -AO3421L is Halogen Free VDS V = -30V ID = A VGS = -10V RDS ON < VGS = -10V RDS ON < VGS = -4.5V TO-236 SOT-23 Top View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -20 1 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t 10s Steady-State 70 100 Maximum Junction-to-Lead C Steady-State Max 90 125 80 Units V W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO3421 Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=-24V, VGS=0V TJ=55°C IGSS Gate-Body leakage current |
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