AO3401AL_DELTA
AO3401AL_DELTA Datasheet
AO3401A P-Channel Enhancement Mode Field Effect Transistor
| Part | Datasheet |
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AO3401AL_DELTA |
AO3401AL_DELTA (pdf) |
| Related Parts | Information |
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AO3401AL |
AO3401AL |
| PDF Datasheet Preview |
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| AO3401A P-Channel Enhancement Mode Field Effect Transistor The AO3401A/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications. AO3401A and AO3401AL are electrically identical. -RoHS Compliant -AO3401AL is Halogen Free VDS V = -30V ID = -4.3A VGS = -10V RDS ON < VGS = -10V RDS ON < VGS = -4.5V RDS ON < VGS = -2.5V Rg,Ciss,Coss,Crss Tested TO-236 SOT-23 Top View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current A,F TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±12 -25 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t 10s Steady-State Steady-State 65 85 Max 90 125 80 Units V W °C Units °C/W °C/W °C/W AO3401A Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V IDSS |
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