AS4C4M16S-6TINTR

AS4C4M16S-6TINTR Datasheet

AS4C4M16S

Part	Datasheet
AS4C4M16S-6TINTR	AS4C4M16S-6TINTR (pdf)

Related Parts	Information
AS4C4M16S-7TCN	AS4C4M16S-7TCN
AS4C4M16S-6TCN	AS4C4M16S-6TCN
AS4C4M16S-6TCNTR	AS4C4M16S-6TCNTR
AS4C4M16S-7TCNTR	AS4C4M16S-7TCNTR
AS4C4M16S-6TIN	AS4C4M16S-6TIN

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AS4C4M16S Details Preliminary datasheet Removed 6TAN automotive temp page 1 and page 52 see separate datasheet for this option Added 6TCN 166MHz clock commercial temp page 1 and page 52 Added in temperature range to page 1 * Operating temperature range - Commercial 0 ~ 70°C - Industrial -40 ~ 85°C Date February 2011 May 2014 May 2014 May 2014 Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070 TEL 650 610-6800 FAX 650 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice. FEBRUARY 2011 AS4C4M16S 64Mb / 4M x 16 bit Synchronous DRAM SDRAM Alliance Memory • Fast access time from clock ns • Fast clock rate 166/143 MHz • Fully synchronous operation • Internal pipelined architecture • 1M word x 16-bit x 4-bank • Programmable Mode registers - CAS Latency 2, or 3 - Burst Length 1, 2, 4, 8, or full page - Burst Type interleaved or linear burst - Burst stop function • Auto Refresh and Self Refresh • 4096 refresh cycles/64ms • CKE power down mode • Single +3.3V ± 0.3V power supply • Interface LVTTL • 54-pin 400 mil plastic TSOP II package - Pb free and Halogen free Table1. Key Specifications AS4C4M16S tCK3 Clock Cycle time min. tAC3 Access time from CLK max. tRAS Row Active time min. tRC Row Cycle time min. - 6/7 6/7ns 5.4/5.4ns 42/49 ns 60/63 ns Table Ordering Information Frequency AS4C4M16S-6TCN 166MHz AS4C4M16S-6TIN 166MHz AS4C4M16S-7TCN 143MHz Package TSOP II TSOP II TSOP II T indicates TSOPII Package, N indicates Pb and Halogen Free for TSOPII Package Figure 1.Pin Assignment Top View Overview The AS4C4M16S SDRAM is a high-speed CMOS synchronous DRAM containing 64 Mbits. It is internally configured as 4 Banks of 1M word x 16 DRAM with a synchronous interface all signals are registered on the positive edge of the clock signal, CLK . Read and write accesses to the SDRAM are burst oriented accesses st art at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command. The AS4C4M16S provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use. By having a programmable mode register, the system can choose the most suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth and particularly well suited to high performance PC applications. * Operating temperature range - Commercial 0 ~ 70°C - Industrial -40 ~ 85°C VDDQ VSSQ VDDQ VSSQ LDQM CAS# RAS# A10/AP DQ15 VSSQ DQ14 DQ13 VDDQ DQ12 DQ11 VSSQ DQ10 VDDQ NC/RFU UDQM FEBRUARY 2011 Figure Block Diagram BUFFER CS# RAS# CAS# WE# COMMAND DECODER CONTROL SIGNAL GENERATOR ORDERING INFORMATION Alliance AS4C4M16S-6TCN AS4C4M16S-6TIN AS4C4M16S-7TCN Organization VCC Range Package 4M x 16 3.3V+/-0.3V 54 TSOP II 4M x 16 3.3V+/-0.3V 54 TSOP II 4M x 16 3.3V+/-0.3V 54 TSOP II Operating Temp Commercial Industrial Commercial Speed MHz 166 166 143 PART NUMBERING SYSTEM AS4C 4M44M16S S= SDRAM prefix 64Mb 4Mx16 -6 Speed T=TSOP Package 54 pin TSOP II Temperature Range C = Commercial 0 - 70°C I = Industrial -45 - 85°C N = Lead Free RoHS compliant part

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AS4C4M16S

Details Preliminary datasheet Removed 6TAN automotive temp page 1 and page 52 see separate datasheet for this option Added 6TCN 166MHz clock commercial temp page 1 and page 52 Added in temperature range to page 1 * Operating temperature range - Commercial 0 ~ 70°C - Industrial -40 ~ 85°C

Date February 2011 May 2014

May 2014

May 2014

Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070 TEL 650 610-6800 FAX 650 620-9211

Alliance Memory Inc. reserves the right to change products or specification without notice.

FEBRUARY 2011

AS4C4M16S
64Mb / 4M x 16 bit Synchronous DRAM SDRAM

Alliance Memory
• Fast access time from clock ns
• Fast clock rate 166/143 MHz
• Fully synchronous operation
• Internal pipelined architecture
• 1M word x 16-bit x 4-bank
• Programmable Mode registers
- CAS Latency 2, or 3 - Burst Length 1, 2, 4, 8, or full page - Burst Type interleaved or linear burst - Burst stop function
• Auto Refresh and Self Refresh
• 4096 refresh cycles/64ms
• CKE power down mode
• Single +3.3V ± 0.3V power supply
• Interface LVTTL
• 54-pin 400 mil plastic TSOP II package - Pb free and Halogen free

Table1. Key Specifications AS4C4M16S
tCK3 Clock Cycle time min. tAC3 Access time from CLK max. tRAS Row Active time min.
tRC Row Cycle time min.
- 6/7 6/7ns 5.4/5.4ns 42/49 ns 60/63 ns
Table Ordering Information

Frequency

AS4C4M16S-6TCN 166MHz AS4C4M16S-6TIN 166MHz

AS4C4M16S-7TCN 143MHz

Package

TSOP II TSOP II TSOP II

T indicates TSOPII Package, N indicates Pb and Halogen Free for TSOPII Package

Figure 1.Pin Assignment Top View

Overview

The AS4C4M16S SDRAM is a high-speed CMOS synchronous DRAM containing 64 Mbits. It is internally configured as 4 Banks of 1M word x 16 DRAM with a synchronous interface all signals are registered on the positive edge of the clock signal, CLK . Read and write accesses to the SDRAM are burst oriented accesses st art at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.

The AS4C4M16S provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use. By having a programmable mode register, the system can choose the most suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth and particularly well suited to high performance PC applications.
* Operating temperature range
- Commercial 0 ~ 70°C
- Industrial -40 ~ 85°C

VDDQ

VSSQ

VDDQ

VSSQ

LDQM

CAS#

RAS#

A10/AP

DQ15

VSSQ

DQ14

DQ13

VDDQ

DQ12

DQ11

VSSQ

DQ10

VDDQ

NC/RFU

UDQM

FEBRUARY 2011

Figure Block Diagram

BUFFER

CS# RAS# CAS# WE#

COMMAND DECODER

CONTROL SIGNAL

GENERATOR
ORDERING INFORMATION

Alliance

AS4C4M16S-6TCN AS4C4M16S-6TIN AS4C4M16S-7TCN

Organization

VCC Range

Package
4M x 16
3.3V+/-0.3V 54 TSOP II
4M x 16
3.3V+/-0.3V 54 TSOP II
4M x 16
3.3V+/-0.3V 54 TSOP II

Operating Temp

Commercial Industrial Commercial

Speed MHz 166
166 143

PART NUMBERING SYSTEM

AS4C
4M44M16S

S= SDRAM prefix 64Mb 4Mx16
-6 Speed

T=TSOP Package 54 pin TSOP II

Temperature Range

C = Commercial 0 - 70°C I = Industrial -45 - 85°C

N = Lead Free RoHS compliant part

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived AS4C4M16S-6TINTR Datasheet file may be downloaded here without warranties.

Datasheet ID: AS4C4M16S-6TINTR 516133