IRFS31N20DTRR

IRFS31N20DTRR Datasheet

IRFB31N20D IRFS31N20D IRFSL31N20D

Part	Datasheet
IRFS31N20DTRR	IRFS31N20DTRR (pdf)

Related Parts	Information
IRFSL31N20D	IRFSL31N20D
IRFSL31N20DTRL	IRFSL31N20DTRL
IRFSL31N20DTRR	IRFSL31N20DTRR
IRFS31N20DTRL	IRFS31N20DTRL

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SMPS MOSFET PD- 93805B IRFB31N20D IRFS31N20D IRFSL31N20D Power MOSFET Applications l High frequency DC-DC converters VDSS RDS on max 200V l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001 l Fully Characterized Avalanche Voltage and Current TO-220AB IRFB31N20D D2Pak TO-262 IRFS31N20D IRFSL31N20D Absolute Maximum Ratings ID TC = 25°C ID TC = 100°C IDM PD = 25°C PD = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS 10V Continuous Drain Current, VGS 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 Max. 31 21 124 200 ± 30 -55 to + 175 300 1.6mm from case 10 lbf•in 1.1N•m Units W/°C V V/ns Typical SMPS Topologies l Telecom 48V Input Forward Converters Notes through are on page 11 2/14/00 IRFB/IRFS/IRFSL31N20D Static TJ = 25°C unless otherwise specified Parameter Min. Typ. Max. Units Conditions V BR DSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS on Static Drain-to-Source On-Resistance VGS th Gate Threshold Voltage IDSS Drain-to-Source Leakage Current

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SMPS MOSFET

PD- 93805B

IRFB31N20D IRFS31N20D IRFSL31N20D

Power MOSFET

Applications l High frequency DC-DC converters

VDSS RDS on max
200V
l Low Gate-to-Drain Charge to Reduce

Switching Losses
l Fully Characterized Capacitance Including

Effective COSS to Simplify Design, See App. Note AN1001 l Fully Characterized Avalanche Voltage and Current

TO-220AB IRFB31N20D

D2Pak

TO-262

IRFS31N20D IRFSL31N20D

Absolute Maximum Ratings

ID TC = 25°C ID TC = 100°C IDM PD = 25°C PD = 25°C

VGS dv/dt TJ TSTG

Parameter Continuous Drain Current, VGS 10V Continuous Drain Current, VGS 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3

Max. 31 21 124 200 ± 30
-55 to + 175
300 1.6mm from case 10 lbf•in 1.1N•m

Units

W/°C V

V/ns

Typical SMPS Topologies l Telecom 48V Input Forward Converters

Notes through are on page 11
2/14/00

IRFB/IRFS/IRFSL31N20D

Static TJ = 25°C unless otherwise specified

Parameter

Min. Typ. Max. Units

Conditions

V BR DSS Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

RDS on

Static Drain-to-Source On-Resistance

VGS th

Gate Threshold Voltage

IDSS

Drain-to-Source Leakage Current

More datasheets: CA3106F22-23PB13 | DEM-9P-K127 | M85049/2-12C | M85049/2-6C | M85049/2-8C | M85049/2-3C | M85049/2-16C | IRFSL31N20D | IRFSL31N20DTRL | IRFSL31N20DTRR

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Datasheet ID: IRFS31N20DTRR 639049