IRF3205ZSTRL

IRF3205ZSTRL Datasheet

TO-220AB IRF3205Z

Part	Datasheet
IRF3205ZSTRL	IRF3205ZSTRL (pdf)

Related Parts	Information
IRF3205ZSTRR	IRF3205ZSTRR
IRF3205ZS	IRF3205ZS
IRF3205Z	IRF3205Z
IRF3205ZL	IRF3205ZL
IRF3205ZPBF	IRF3205ZPBF

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PD - 94653B AUTOMOTIVE MOSFET ● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive applications, this Power MOSFET utilizes the latest processing techniques to achieve extremely low on- resistance per silicon area. Additional features of this design are a 175°C junction operating tempera- ture, fast switching speed and improved repetitive avalanche rating These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB IRF3205Z Absolute Maximum Ratings Parameter ID TC = 25°C Continuous Drain Current, VGS 10V Silicon Limited ID TC = 100°C Continuous Drain Current, VGS 10V ID TC = 25°C Continuous Drain Current, VGS 10V Package Limited Pulsed Drain Current PD = 25°C Power Dissipation Linear Derating Factor Gate-to-Source Voltage d EAS Thermally limited Single Pulse Avalanche Energy h EAS Tested Single Pulse Avalanche Energy Tested Value Ã IAR Avalanche Current g EAR Repetitive Avalanche Energy TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds i Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter Junction-to-Case i Case-to-Sink, Flat Greased Surface i Junction-to-Ambient j Junction-to-Ambient PCB Mount IRF3205Z IRF3205ZS IRF3205ZL Power MOSFET VDSS = 55V RDS on = ID = 75A D2Pak IRF3205ZS TO-262 IRF3205ZL Max. 110 78 75 440 170 ± 20 180 250 See Fig.12a, 12b, 15, 16

PDF Datasheet Preview

PD - 94653B

AUTOMOTIVE MOSFET
● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax

Description Specifically designed for Automotive applications, this Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

TO-220AB IRF3205Z

Absolute Maximum Ratings

Parameter

ID TC = 25°C Continuous Drain Current, VGS 10V Silicon Limited

ID TC = 100°C Continuous Drain Current, VGS 10V
ID TC = 25°C Continuous Drain Current, VGS 10V Package Limited

Pulsed Drain Current

PD = 25°C Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage
d EAS Thermally limited Single Pulse Avalanche Energy
h EAS Tested Single Pulse Avalanche Energy Tested Value
Ã IAR

Avalanche Current
g EAR

Repetitive Avalanche Energy

TJ TSTG

Operating Junction and Storage Temperature Range

Soldering Temperature, for 10 seconds
i Mounting Torque, 6-32 or M3 screw

Thermal Resistance

Parameter Junction-to-Case
i Case-to-Sink, Flat Greased Surface i Junction-to-Ambient j Junction-to-Ambient PCB Mount

IRF3205Z IRF3205ZS IRF3205ZL

Power MOSFET

VDSS = 55V

RDS on =

ID = 75A

D2Pak IRF3205ZS

TO-262 IRF3205ZL

Max. 110 78 75 440 170 ± 20 180 250 See Fig.12a, 12b, 15, 16

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived IRF3205ZSTRL Datasheet file may be downloaded here without warranties.

Datasheet ID: IRF3205ZSTRL 639031