IRF2807Z

IRF2807Z Datasheet

IRF2807Z

Part	Datasheet
IRF2807Z	IRF2807Z (pdf)

Related Parts	Information
IRF2807ZSTRL	IRF2807ZSTRL
IRF2807ZL	IRF2807ZL
IRF2807ZS	IRF2807ZS
IRF2807ZSTRR	IRF2807ZSTRR

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PD - 94659A IRF2807Z AUTOMOTIVE MOSFET IRF2807ZS Features O Advanced Process Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C Operating Temperature O Fast Switching O Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive applications, this Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. IRF2807ZL Power MOSFET VDSS = 75V RDS on = ID = 75A TO-220AB IRF2807Z D2Pak IRF2807ZS TO-262 IRF2807ZL Absolute Maximum Ratings Parameter ID TC = 25°C ID TC = 100°C ID TC = 25°C IDM PD = 25°C Continuous Drain Current, VGS 10V Silicon Limited Continuous Drain Current, VGS 10V See Fig. 9 Continuous Drain Current, VGS 10V Package Limited c Pulsed Drain Current Maximum Power Dissipation VGS EAS tested IAR EAR Linear Derating Factor Gate-to-Source Voltage d Single Pulse Avalanche Energy Thermally Limited i Single Pulse Avalanche Energy Tested Value c Avalanche Current h Repetitive Avalanche Energy TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter Junction-to-Case-to-Sink, Flat, Greased Surface Junction-to-Ambient j Junction-to-Ambient PCB Mount, steady state is a registered trademark of International Rectifier. Max. 89 63 75 350 170 ± 20 160 200 See Fig.12a,12b,15,16 -55 to + 175 300 1.6mm from case 10 lbf•in 1.1N•m Typ. Max. 62 40

PDF Datasheet Preview

PD - 94659A

IRF2807Z

AUTOMOTIVE MOSFET

IRF2807ZS

Features O Advanced Process Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C Operating Temperature O Fast Switching O Repetitive Avalanche Allowed up to Tjmax

Description Specifically designed for Automotive applications, this Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

IRF2807ZL

Power MOSFET

VDSS = 75V

RDS on =

ID = 75A

TO-220AB IRF2807Z

D2Pak IRF2807ZS

TO-262 IRF2807ZL

Absolute Maximum Ratings

Parameter

ID TC = 25°C ID TC = 100°C ID TC = 25°C IDM PD = 25°C

Continuous Drain Current, VGS 10V Silicon Limited

Continuous Drain Current, VGS 10V See Fig. 9

Continuous Drain Current, VGS 10V Package Limited
c Pulsed Drain Current

Maximum Power Dissipation

VGS EAS tested IAR EAR

Linear Derating Factor

Gate-to-Source Voltage
d Single Pulse Avalanche Energy Thermally Limited i Single Pulse Avalanche Energy Tested Value c Avalanche Current h Repetitive Avalanche Energy

TJ TSTG

Operating Junction and Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

Thermal Resistance

Parameter Junction-to-Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient
j Junction-to-Ambient PCB Mount, steady state
is a registered trademark of International Rectifier.

Max. 89 63 75 350 170 ± 20 160 200

See Fig.12a,12b,15,16
-55 to + 175
300 1.6mm from case 10 lbf•in 1.1N•m

Typ.

Max. 62 40

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Datasheet ID: IRF2807Z 639030